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US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Semiconductor structure with treated gate dielectric layer and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,360, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor structure with treated ... Read More


US Patent Issued to International Business Machines on Nov. 3 for "Integration of different gate dielectrics nanosheet devices" (New York Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,361, issued on Nov. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Integration of different gate dielectrics nano... Read More


US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Nov. 3 for "Semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,362, issued on Nov. 3, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing). "Semiconductor device and metho... Read More


US Patent Issued to Intel on Nov. 3 for "Wall coupled with two stacks of nanoribbons to electrical isolate gate metals" (Oregon Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,363, issued on Nov. 3, was assigned to Intel Corp. (Santa Clara, Calif.). "Wall coupled with two stacks of nanoribbons to electrical isolate... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Semiconductor device and method for fabricating the same" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,364, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device and method for fabrica... Read More


US Patent Issued to QUALCOMM Incorproated on Nov. 3 for "Gate-all-around (GAA) nanosheet device having inner gate spacer with rounded edges" (American, Indian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,365, issued on Nov. 3, was assigned to QUALCOMM Incorproated (San Diego). "Gate-all-around (GAA) nanosheet device having inner gate spacer w... Read More


US Patent Issued to SK keyfoundry on Nov. 3 for "Non-volatile semiconductor memory device and manufacturing method thereof" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,366, issued on Nov. 3, was assigned to SK keyfoundry Inc. (Cheongju-si, South Korea). "Non-volatile semiconductor memory device and manufact... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Ferroelectric field effect transistor and methods of forming the same" (Belgian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,367, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Ferroelectric field effect transi... Read More


US Patent Issued to GLOBALFOUNDRIES U.S. on Nov. 3 for "Opening in stress-inducing liner(s) between transistors" (New York Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,368, issued on Nov. 3, was assigned to GLOBALFOUNDRIES U.S. INC. (Malta, N.Y.). "Opening in stress-inducing liner(s) between transistors" wa... Read More


US Patent Issued to ESPROS Photonics on Nov. 3 for "Charge transfer device having a taper at the gate for clock frequencies from 100 MHz" (Swiss Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,369, issued on Nov. 3, was assigned to ESPROS Photonics AG (Sargans, Switzerland). "Charge transfer device having a taper at the gate for cl... Read More